New Form of High-k Dielectric Materials for 2D Transistors - Prof. Sean Li

New Form of High-k Dielectric Materials for 2D Transistors

2025 UTS FEIT Research Excellence Guest Lecture Series

Prof. Sean Li

UNSW Materials and Manufacturing Futures Institute

Abstract
For decades, computer chips have become smaller and faster by shrinking silicon transistors, following Moore’s law. But as silicon devices approach dimensions below ten nanometres, they face fundamental challenges such as energy loss through leakage currents. Atomically thin materials, known as two-dimensional (2D) semiconductors, offer a promising alternative—but require equally advanced insulating layers to function effectively.

We have developed an ultrathin, high-performance insulator made from strontium titanate, a single-crystal perovskite material, and integrated it with 2D semiconductors to create next-generation transistors. These devices are highly energy-efficient, capable of fast switching while minimising energy loss, and already meet the low-power standards set for future technologies. This breakthrough opens a pathway toward faster, greener, and more scalable electronics beyond silicon.

Biography
Professor Sean Li is a leading Australian materials scientist and Director of the Materials and Manufacturing Futures Institute at UNSW Sydney. With a career spanning over 25 years, he has held academic positions at Nanyang Technological University in Singapore and across multiple roles at UNSW, progressing from Lecturer to Professor. His research has bridged fundamental science and industry, resulting in numerous patented innovations and high-impact publications in journals such as Nature, Science, and Progress in Materials Science, Advanced Materials. In 2025, he was awarded a prestigious ARC Laureate Fellowship, receiving $3.78 million to develop ultrathin, high-k dielectric materials for atomic-scale transistors - advancing Australia’s leadership in energy-efficient electronics and quantum technologies.